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ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 1 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com 3 - pin sot - 89 package applications ? repeaters ? mobile infrastructure ? lte / wcdma / edge / cdma ordering information part no. description ah 125 - 89 g ? w high linearity amplifier standard t/r size = 1000 pie ces on a 7 reel. product features ? 400 ? 3600 mhz ? +28 dbm p1db ? +45 dbm output ip3 ? 16.2 db gain @ 2140 mhz ? 150 ma current draw ? +5 v single supply ? mttf > 100 years ? lead- free/green/rohs - compliant sot - 89 package ? class 2 hbm esd rating (>2kv) genera l description the ah125 is a high dynamic range driver amplifier in a low - cost surface mount package. the ingap/gaas hbt is able to achieve high performance across a broad range with +45 dbm oip3 and +28 dbm of compressed 1db power while drawing 150 ma current. the ah125 is available in a lead - free/green/rohs - compliant sot - 89 package. all devices are 100% rf and dc tested. the ah125 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high effi ciency are required. internal biasing allows the ah125 to maintain high linearity over temperature and operate directly off a single +5v supply. this combination makes the device an excellent candidate for transceiver line cards in current and next gener ation multi - carrier 3g base stations or repeaters. pin configuration pin no. symbol 1 vbias 3 rfin 2,4 rfout/vcc functional block diagram rf in gnd rf out gnd 1 2 3 4 not recommended for new designs recomme nded replacement part: tqp7m9102
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 2 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com recommended operating conditions parameter min typ max units case temperature ? 40 +85 c tj for >10 6 hours mttf + 200 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. absolute maximum ratings parameter rating storage temper ature ? 65 to 150c rf input power, cw, 50, t=25 c input p 10 db device voltage +6 v operation of this device outside the parameter ranges given above may cause permanent damage. electrical specifications test conditions unless otherwise noted: v su pply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit parameter conditions min typ max units operational frequency range 400 3600 mhz test frequency 2140 mhz gain 14 16.2 18 db input return loss 12 db output return loss 12 db w - cdma channel power at - 50dbc aclr , note 1 +19 dbm output p1db +28 dbm output ip3 pout=+12 dbm/tone, f=1 mhz +41 +45 dbm noise figure 4.4 db quiescent collector current 130 150 170 ma thermal resistance, jc junction to case 64.3 c / w performance summary table test conditions unless otherwise noted: v supply =+5 v, i cq = 150 ma (typ.), temp= +25c, tuned application circuit parameter conditions typical units frequency 920 1960 2140 mhz gain 20 17 16.2 db input return loss 20 16 12 db output return loss 9.9 9 12 db w - cdma channel power at - 50 dbc aclr , note 1 +19 +19 +19 dbm output p1db +28.1 +27.8 +28.0 dbm output ip3 note 2 +47 +47 +45 dbm noise figure 7.7 4.6 4.4 db notes: 1 . w - cdma 3gpp test model 1+64 dpch, par = 10.3 db at 0.01% probability, 3.84 mhz. 2 . oip3 is measured with two tones separated by 1 mhz. m easured at pout=+ 17dbm/tone for 900 mhz, + 14 dbm/tone for 1960 mhz, and + 12 dbm/tone for 2140 mhz.
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 3 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com device characterization data note: the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown i n the dashed red line. s - parameters test conditions: v device = +5 v, i c q = 150 ma, t= +25 c, unmatc hed 50 ohm system freq ( m hz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 100 - 2.51 176.96 19.12 153.71 - 33.85 - 7.98 - 4.58 - 168.55 300 - 6.65 - 179.55 16.82 171.45 - 41.51 - 51.50 - 3.50 167.66 500 - 0.47 - 166.72 19.86 129.11 - 32.54 37.90 - 6.46 - 173.90 700 - 0.50 179.58 16.95 110.14 - 32.11 15.12 - 4.57 - 177.11 900 - 0.56 173.91 15.09 99.64 - 32.29 6.66 - 4.14 177.58 1100 - 0.65 170.52 13.68 91.32 - 32.15 2.53 - 3.89 173.40 1300 - 0.78 166.87 12.37 83.49 - 32.04 - 2.50 - 3.71 169.83 150 0 - 0.82 163.90 11.21 76.80 - 32.11 - 4.03 - 3.64 167.10 1700 - 0.93 161.34 10.11 71.12 - 31.97 - 7.89 - 3.70 164.08 1900 - 0.93 157.61 9.40 64.93 - 31.94 - 9.93 - 3.64 160.19 2100 - 0.94 154.21 8.47 58.83 - 31.97 - 10.87 - 3.54 156.60 2300 - 0.91 151.59 7.66 53.42 - 31 .80 - 14.20 - 3.48 153.92 2500 - 0.93 149.24 7.06 49.26 - 32.04 - 16.18 - 3.67 152.18 2700 - 0.90 145.94 6.70 43.87 - 31.63 - 16.91 - 3.72 147.67 2900 - 0.96 143.87 6.12 39.45 - 31.18 - 18.50 - 3.54 143.63 3100 - 1.07 139.90 5.74 34.00 - 31.37 - 23.47 - 3.52 141.32 330 0 - 1.18 136.50 5.09 29.36 - 31.25 - 20.88 - 3.70 140.24 3500 - 1.18 133.80 4.62 24.20 - 31.12 - 27.12 - 3.72 135.07 3700 - 1.11 132.39 4.12 20.26 - 31.25 - 26.33 - 3.64 130.47
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 4 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com 869 - 960 mhz application circuit l1 c1 c10 r1 r2 c9 c2 c3 c8 r4 notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of r2 is placed at 280 mil from ah125 rfout pin. (14.3 o at 920 mhz) 5. the edge of c9 is placed 35 mil from the edge of r2. (1.8 o at 920 mhz) 6. the edge of r1 is placed at 100 mil from ah125 rfin pin. (5.1 o at 920 mhz) 7. the edge of c10 is placed 130 mil from the edge of r1. (6.6 o at 920 mhz) typical performance 869 - 960 mhz test conditions unless othe rwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit frequency conditions 869 920 960 mhz gain 20 20 20 db input return loss 14 20 22 db output return loss 10 9.9 9.9 db aclr pout = +18 dbm, note 1 - 52 - 52.5 - 52 d bc output p1db +27.4 +28.1 +27.9 dbm output ip3 pout=+17 dbm/tone, f=1 mhz +44 +47 +49 dbm noise figure 7.9 7.7 7.5 db notes: 1 . w - cdma 3gpp test model 1+64 dpch, par = 10.3 db at 0.01% probability, 3.84 mhz.
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 5 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com performance plots 8 69 - 960 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit 18 19 20 21 22 840 860 880 900 920 940 960 980 |s21| (db) frequency (mhz) gain vs. frequency - 40 c +25 c +85 c - 25 - 20 - 15 - 10 - 5 0 840 860 880 900 920 940 960 980 |s11| (db) frequency (mhz) input return loss vs. frequency - 40 c +25 c +85 c - 25 - 20 - 15 - 10 - 5 0 840 860 880 900 920 940 960 980 |s22| (db) frequency (mhz) output return loss vs. frequency - 40 c +25 c +85 c 18 19 20 21 22 - 40 - 15 10 35 60 85 |s21| (db) temperature ( c) gain vs. temperature 869 mhz 920 mhz 960 mhz - 70 - 65 - 60 - 55 - 50 - 45 - 40 14 15 16 17 18 19 20 aclr (dbc) output power (dbm) aclr vs. output power over frequency 869 mhz 920 mhz 960 mhz w - cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw - 70 - 65 - 60 - 55 - 50 - 45 - 40 14 15 16 17 18 19 20 aclr (dbc) output power (dbm) aclr vs. output power over temperature - 40 c +25 c +85 c w - cdma 3gpp test model 1+64 dpch par = 10.2 db @ 0.01% probability 3.84 mhz bw freq.=920 mhz 35 40 45 50 55 10 11 12 13 14 15 16 17 18 oip3 (dbm) output power per tone (dbm) oip3 vs. pout/tone over temperature - 40 c +25 c +85 c freq.=920 mhz 1 mhz tone spacing 35 40 45 50 55 10 11 12 13 14 15 16 17 18 oip3 (dbm) output power per tone (dbm) oip3 vs. pout/tone over frequency 869 mhz 920 mhz 960 mhz 35 40 45 50 55 860 880 900 920 940 960 oip3 (dbm) frequency (mhz) oip3 vs. frequency - 40 c +25 c +85 c 1 mhz tone spacing pout=+17dbm per tone 130 140 150 160 170 180 10 12 14 16 18 20 22 icq (ma) output power (dbm) current vs. output power 869 mhz 920 mhz 960 mhz 24 25 26 27 28 29 30 860 880 900 920 940 960 p1db (dbm) frequency (mhz) p1db vs. frequency - 40 c +25 c +85 c 18 20 22 24 26 28 30 0 1 2 3 4 5 6 7 8 9 output power (dbm) input power (dbm) output power vs. input power 869 mhz 920 mhz 960 mhz 6.0 7.0 8.0 9.0 10.0 860 880 900 920 940 960 980 1000 nf (db) frequency (mhz) noise figure vs. frequency - 40 c +25 c +85 c t lead =+25 c 1 mhz tone spacing t lead =+25 c
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 6 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com 1805 - 1880 mhz application circuit l1 c1 c10 r1 r2 c9 c2 c3 c8 r4 c4 c20 r20 trace cut notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. the edge of c9 is placed at 250 mil from ah125 rfout pin. (25.5 o at 1845 mhz) 5. the edge of r1 is placed against the edge of c10. 6. the edge of c10 is placed at 30 mil from ah125 rfin pin. (3.1 o at 1845 mhz ) typical performance 1805 - 1880 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit frequency condit ions 1805 1842 1880 mhz gain 17.8 18.2 18.1 db input return loss 9.5 16.5 17.0 db output return loss 9.4 8.4 7.8 db aclr pout = +18 dbm, note 1 - 51 - 51 - 49 dbc output p1db +28 +27.9 +27.8 dbm output ip3 pout=+14 dbm/tone, f=1 mhz +44 +45 +43.5 dbm notes: 1 . w - cdma 3gpp test model 1+64 dpch, par = 10.3 db at 0.01% probability, 3.84 mhz.
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 7 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com performance plots 1805 - 1880 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned app lication circuit 15 16 17 18 19 20 1800 1820 1840 1860 1880 1900 |s21| (db) frequency (mhz) gain vs. frequency - 30 - 25 - 20 - 15 - 10 - 5 0 1.80 1.82 1.84 1.86 1.88 1.90 return loss (db) frequency (mhz) return loss vs. frequency s11 s22 - 65 - 60 - 55 - 50 - 45 - 40 11 12 13 14 15 16 17 18 19 20 21 aclr (dbc) output power (dbm) aclr vs. output power 1805 mhz 1842 mhz 1880 mhz w - cdma 3gpp tm +64dpch par=10.2db @ 0.01% probability 3.84 mhz bw 38 40 42 44 46 48 8 10 12 14 16 18 oip3 (dbm) output power/tone (dbm) oip3 vs. output power per tone 1805 mhz 1842 mhz 1880 mhz 24 25 26 27 28 29 30 1820 1830 1840 1850 1860 1870 1880 p1db (dbm) frequency (mhz) p1db vs. frequency t lead =+25 c t lead =+25 c 1 mhz tone spacing t lead =+25 c 1 mhz tone spacing t lead =+25 c 1 mhz tone spacing t lead =+25 c 1 mhz tone spacing
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 8 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com 2110 - 2170 mhz application circuit l1 c1 c10 r1 r2 c9 c2 c3 c8 r4 c4 notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen but not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in tar get application. 4. the edge of c9 is placed at 120 mils from ah125 rfout pin. (14.2 o at 2140 mhz) 5. the edge of c2 is placed at 280 mils from the edge of c9. (33.2 o at 2140 mhz) 6. the edge of c10 is placed at 60 mils from ah125 rfin pin. (7.1 o at 2140 mhz) 7. th e edge of r1 is placed 10 mils from the edge of c10. (1.2 o at 2140 mhz) typical performance 2110 - 2170 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit frequency conditions 2110 2140 2170 mhz gain 16.1 16.2 16.3 db input return loss 10 12 15 db output return loss 13 12 11 db aclr pout = +18 dbm - 52 - 52 - 52 dbc output p1db +28 +28 +28 dbm output ip3 pout=+12 dbm/tone, f=1 mhz +49 +45 +47 dbm noise figure 4.3 4.4 4.4 db notes: 1 . td - scdma 3 carrier, par = 10 db @ 0.01% probability, 1.28 mhz bw
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 9 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com performance plots 2110 - 2170 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c , tuned application circuit 14 15 16 17 18 2.10 2.12 2.14 2.16 2.18 2.20 |s21| (db) frequency (ghz) gain vs. frequency - 40 c +25 c +85 c - 25 - 20 - 15 - 10 - 5 0 2.10 2.12 2.14 2.16 2.18 2.20 |s11| (db) frequency (ghz) input return loss - 40 c +25 c +85 c - 25 - 20 - 15 - 10 - 5 0 2.10 2.12 2.14 2.16 2.18 2.20 |s22| (db) frequency (ghz) output return loss - 40 c +25 c +85 c 14 15 16 17 18 - 40 - 15 10 35 60 85 |s21| (db) temperature ( c) gain vs. temperature 2110 mhz 2140 mhz 2170 mhz - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 20 aclr (dbc) output power (dbm) aclr vs. output power 2110 mhz 2140 mhz 2170 mhz w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw - 65 - 60 - 55 - 50 - 45 - 40 10 12 14 16 18 20 aclr (dbc) output power (dbm) aclr vs. output power - 40 c +25 c +85 c w - cdma 3gpp test model 1+64 dpch par = 10.3 db @ 0.01% probability 3.84 mhz bw 35 40 45 50 55 8 9 10 11 12 13 14 15 16 17 18 oip3 (dbm) pout/tone (dbm) oip3 vs. output power/tone 2110 mhz 2140 mhz 2170 mhz 24 25 26 27 28 29 30 2.11 2.12 2.13 2.14 2.15 2.16 2.17 p1db (dbm) frequency (ghz) p1db vs. frequency 0 1 2 3 4 5 6 7 8 2.10 2.12 2.14 2.16 2.18 2.20 nf (db) frequency (ghz) noise figure vs. frequency - 40 c +25 c +85 c t lead =+25 c 1 mhz tone spacing t lead =+25 c t lead = +25 c
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 10 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance 2500 - 2700 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned application circuit frequency conditions 2500 2600 2700 mhz gain 1 3.9 14.0 13.7 db input return loss 9.5 13.1 12.9 db output return loss 9.4 8.7 8.2 db evm pout = +19 dbm 1.5 1.25 1.3 % output p1db +28 +28 +28 dbm output ip3 pout=+16 dbm/tone, f=1 mhz +49 +48 +47 dbm notes: 1 . 802.16 - 2004 o - fdma, 64qam - 1/2, 1024 - fft, 20 symbols and 30 sub - channels, 5 mhz carrier bw . 2500 - 2700 mhz application circuit l1 c1 c10 r1 r2 c9 c2 c3 c8 r4 c4 notes: 1. the primary rf microstrip line is 50 ? . 2. components shown on the silkscreen bu t not on the schematic are not used. 3. 0 ? jumpers can be replaced with copper trace in target application. 4. distance from side edge of c10 to side edge of u1 pin 1 is 55 mils (7.9 at 2600 mhz). 5. distance from end edge of r1 to side edge of u1 pin 1 is 110 mi ls (15.8 at 2600 mhz). 6. distance from side edge of c9 to side edge of u1 pin 3 is 90 mils (13.0 at 2600 mhz). j1 j2 c1 rf input rf output r1 r2 r1 z= 50 ohm l=55 mils z= 50 ohm l=55 mils 1pf 0 ohms 22pf 0 ohms c10 0.8pf c9 0.6pf u1 ah125-89pcb2600 1 2 3 z= 50 ohm l=90 mils r4 vcc l1 0 ohms c8 1uf c4 1000pf 18nh 0805cs c3 22pf
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 11 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com performance plots 2500 - 2700 mhz test conditions unless otherwise noted: v supply =+5 v, i cq =150 ma (typ.), temp= +25c, tuned applicati on circuit 10 11 12 13 14 15 2.40 2.50 2.60 2.70 2.80 gain (db) frequency (ghz) gain vs. frequency - 20 - 15 - 10 - 5 0 2.40 2.50 2.60 2.70 2.80 return loss (db) frequency (ghz) return loss vs. frequency s11 s22 0 1 2 3 4 5 12 14 16 18 20 22 evm (%) output power (dbm) evm vs. output power 2.5 ghz 2.6 ghz 2.7 ghz 802.16 - 2004 o - fdma, 64qam - 1/2 1024- fft, 20 symbols and 30 subchannels 5 mhz carrier bw 0 1 2 3 4 5 12 14 16 18 20 22 evm (%) output power (dbm) evm vs. output power 2.5 ghz 2.6 ghz 2.7 ghz 802.16 - 2004 o - fdma, 64qam - 1/2 1024- fft, 20 symbols and 30 subchannels 5 mhz carrier bw 30 35 40 45 50 55 10 12 14 16 18 20 22 oip3 (dbm) output power/tone (dbm) oip3 vs. output power/tone 2.5 ghz 2.6 ghz 2.7 ghz t lead =+25 c t lead =+25 c t lead =+25 c t lead =+25 c t lead =+25 c 1 mhz tone spacing
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 12 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com pin configuration and description rf in gnd rf out gnd 1 2 3 4 pin no. symbol description 1 rf in rf input. requires external match for optimal performance. external dc block required. 2, 4 gnd rf/dc ground connection 3 rfout / vcc rf ou tput. requires external match for optimal performance. external dc block and supply voltage is required. evaluation board pcb information triquint pcb 107 1363 material and stack - up 1 oz. cu bottom layer nelco n-4000-13 core nelco n-4000-13 r =3.7 typ. 1 oz. cu top layer 1 oz. cu inner layer 1 oz. cu inner layer 0.014" 0.014" 0.062" 0.006" finished board thickness 50 ohm lines: width=28 mils spacing=28 mils
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 13 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com package marki ng and dimensions the ah125 will be marked with an ah125g designator with a lot code marked below the part designator. the y represents the last digit of the year the part was manufactured, the xxx is an auto - generated number, and z refers to a wafer number in a batch. 0.10 (0.004) 3 places m t s z y s 1 2 3 -z- 4 -y- .89 (.035) 3.94 (.155) 2.13 (.084) 2.29 (.090) 1.62 (.064) 4.40 (.173) .35 (.014) .36 (.014) .44 (.017) 1.40 .055 -t- e h l e1 e1 e d1 d c b1 b symbol a 4.60 (.181) 4.50 (.177) 2.29 (.090) 1.83 (.072) 2.60 (.102) 4.25 (.167) 1.20 (.047) 1.50 bsc (.059) 1.10 (.043) 4.10 (.161) 3.00 bsc (.118) 2.20 (.087) 2.50 (.098) 1.73 (.068) 1.60 (.063) max .44 (.017) .48 (.019) .56 (.022) .50 (.020) .40 (.016) .42 (.0165) 1.50 (.059) nom min a 7`8 d d1 e l h b 2x b1 e e1 e1 c (d1) pcb mounting pattern notes: 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135) diamete r drill and have a final plated thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. rf trace width depends upon the pc board material and construction. 4. use 1 oz. copper minimum. 5. all dimensions are in millimeters (inches). angles are in degrees. ah125g yxxx -z
ah125 ? w high linearity ingap hbt amplifier datasheet: rev b 0 5 - 0 2 - 13 - 14 of 14 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: class 2 value: ? 2000v to <4000v test: human body model (hbm) standard: jedec standard jesd22 - a114 esd rating: class iv value: passes 2000v min test: charged device model (cdm) standard: jedec standard jesd22 - c101 solderability c ompatible with both lead - free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. package lead plating: nipdau rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attr ibutes: x lead free x halogen free (chlorine, bromine) x antimony free x tbbp - a (c 15 h 12 br 4 0 2 ) free x pfos free x svhc free msl rating msl rating: 3 test: +260 c convection reflow standard: jedec standard ipc/jedec j - std - 020 contact information for the lat est specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info - sales@ triquint .com fax: +1.503.615.8902 for technical questions and application information: email: sjcapplications.engineering@t riquint .com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or aut horized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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